发明授权
- 专利标题: Buffer circuit of semiconductor memory apparatus
- 专利标题(中): 半导体存储装置的缓冲电路
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申请号: US12494757申请日: 2009-06-30
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公开(公告)号: US07847592B2公开(公告)日: 2010-12-07
- 发明人: Ji-Wang Lee , Yong-Ju Kim , Sung-Woo Han , Hee-Woong Song , Ic-Su Oh , Hyung-Soo Kim , Tae-Jin Hwang , Hae-Rang Choi , Jae-Min Jang , Chang-Kun Park
- 申请人: Ji-Wang Lee , Yong-Ju Kim , Sung-Woo Han , Hee-Woong Song , Ic-Su Oh , Hyung-Soo Kim , Tae-Jin Hwang , Hae-Rang Choi , Jae-Min Jang , Chang-Kun Park
- 申请人地址: KR Gyeonggi-do
- 专利权人: Hynix Semiconductor Inc.
- 当前专利权人: Hynix Semiconductor Inc.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: Venable LLP
- 代理商 Jeffri A. Kaminski
- 优先权: KR10-2008-0079725 20080814
- 主分类号: H03K19/0175
- IPC分类号: H03K19/0175 ; H03K19/0185
摘要:
A buffer circuit of a semiconductor memory apparatus includes a buffering section configured to increase or decrease a voltage level of an output node by comparing a voltage level of an input signal with a voltage level of a reference voltage. A voltage compensation section applies a voltage to the output node in proportion to a variation of the reference voltage when the level of the reference voltage is lower than a target level.
公开/授权文献
- US20100039140A1 BUFFER CIRCUIT OF SEMICONDUCTOR MEMORY APPARATUS 公开/授权日:2010-02-18
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