Methods, devices, modules, and systems for operating memory cells are taught. A method for operating memory cells includes programming at least one of the memory cells to one of a number of states. The method also includes programming at least another one of the memory cells, which is adjacent to the programmed at least one of the memory cells, to one of a different number of states. The method further includes sensing non-erased states of the memory cell's using at least one common voltage level.