发明授权
US07830742B2 Semiconductor memory device and memory cell accessing method thereof
有权
半导体存储器件及其存储单元访问方法
- 专利标题： Semiconductor memory device and memory cell accessing method thereof
- 专利标题（中）： 半导体存储器件及其存储单元访问方法
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申请号： US12007855申请日： 2008-01-16
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公开(公告)号： US07830742B2公开(公告)日： 2010-11-09
- 发明人: Yong-Joo Han
- 申请人： Yong-Joo Han
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Lee & Morse, P.C.
- 优先权： KR10-2007-0008029 20070125
- 主分类号： G11C8/00
- IPC分类号： G11C8/00
摘要：
A memory cell accessing method may include receiving an input address, determining whether the input address has been accessed at least a predetermined number of times, and converting a memory cell enabled by the input address when it is determined that the input address has been accessed the predetermined number of times or more.
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