发明授权
US07829428B1 Method for eliminating a mask layer during thin film resistor manufacturing
有权
在薄膜电阻器制造期间消除掩模层的方法
- 专利标题： Method for eliminating a mask layer during thin film resistor manufacturing
- 专利标题（中）： 在薄膜电阻器制造期间消除掩模层的方法
-
申请号： US12229689申请日： 2008-08-26
-
公开(公告)号： US07829428B1公开(公告)日： 2010-11-09
- 发明人: Yaojian Leng , Rodney Hill , Terry Lines
- 申请人： Yaojian Leng , Rodney Hill , Terry Lines
- 申请人地址： US CA Santa Clara
- 专利权人： National Semiconductor Corporation
- 当前专利权人： National Semiconductor Corporation
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A method is disclosed for eliminating a mask layer during the manufacture of thin film resistor circuits. The method of the present invention enables the simultaneous etching of both deep vias and shallow vias using one mask layer instead of two mask layers. A high selectivity film layer of silicon nitride is formed on the ends of a thin film resistor layer. The thickness of the silicon nitride causes the etch time for a shallow via to the thin film resistor to be approximately equal to an etch time for a deep via that is etched through dielectric material to an underlying patterned metal layer.
信息查询
IPC分类:
