发明授权
- 专利标题： Contact pad structure for flip chip semiconductor die
- 专利标题（中）： 倒装芯片半导体芯片的接触焊盘结构
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申请号： US11586902申请日： 2006-10-26
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公开(公告)号： US07821133B2公开(公告)日： 2010-10-26
- 发明人: Hazel D. Schofield , Slawomir Skocki , Philip Adamson
- 申请人： Hazel D. Schofield , Slawomir Skocki , Philip Adamson
- 申请人地址： US CA El Segundo
- 专利权人： International Rectifier Corporation
- 当前专利权人： International Rectifier Corporation
- 当前专利权人地址： US CA El Segundo
- 代理机构： Farjami & Farjami LLP
- 主分类号： H01L21/461
- IPC分类号： H01L21/461 ; H01L29/12
摘要：
A flip chip Schottky die is provided, which includes three contact bumps extending from a top surface of the die for electrically connecting with a board, a first and second bump being cathode contacts, and a third bump being an anode contact and having a larger surface than each of the first and second bumps for a 0.5 ampere device. Each bump is substantially rectangular at its base, but may have a curved or arched top surface on a square die. Also, provided is a contact bump useful in a flip chip device, such as a MOSFET or diode for a current of 1.0 amperes that includes a solder body of PbSn or a solder body free of lead comprising SnAgCu. Such a contact bump is substantially rectangular, and a height of approximately 120 μm.
公开/授权文献
- US20070096316A1 Contact pad structure for flip chip semiconductor die 公开/授权日：2007-05-03
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