发明授权
- 专利标题: Semiconductor device and method of fabricating the same
- 专利标题(中): 半导体装置及其制造方法
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申请号: US12100873申请日: 2008-04-10
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公开(公告)号: US07808009B2公开(公告)日: 2010-10-05
- 发明人: Yoshiharu Hirakata , Yuugo Goto , Yuko Kobayashi , Shunpei Yamazaki
- 申请人: Yoshiharu Hirakata , Yuugo Goto , Yuko Kobayashi , Shunpei Yamazaki
- 申请人地址: JP Kanagawa-Ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Kanagawa-Ken
- 代理机构: Nixon Peabody LLP
- 代理商 Jeffrey L. Costellia
- 优先权: JP11-191102 19990706
- 主分类号: H01L27/15
- IPC分类号: H01L27/15
摘要:
There is provided a high quality liquid crystal panel having a thickness with high accuracy, which is designed, without using a particulate spacer, within a free range in accordance with characteristics of a used liquid crystal and a driving method, and is also provided a method of fabricating the same. The shape of a spacer for keeping a substrate interval constant is made such that it is a columnar shape, a radius R of curvature is 2 μm or less, a height H is 0.5 μm to 10 μm, a diameter is 20 μm or less, and an angle α is 65° to 115°. By doing so, it is possible to prevent the lowering of an opening rate and the lowering of light leakage due to orientation disturbance.
公开/授权文献
- US20090040445A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 公开/授权日:2009-02-12
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