Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12100873Application Date: 2008-04-10
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Publication No.: US07808009B2Publication Date: 2010-10-05
- Inventor: Yoshiharu Hirakata , Yuugo Goto , Yuko Kobayashi , Shunpei Yamazaki
- Applicant: Yoshiharu Hirakata , Yuugo Goto , Yuko Kobayashi , Shunpei Yamazaki
- Applicant Address: JP Kanagawa-Ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-Ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP11-191102 19990706
- Main IPC: H01L27/15
- IPC: H01L27/15

Abstract:
There is provided a high quality liquid crystal panel having a thickness with high accuracy, which is designed, without using a particulate spacer, within a free range in accordance with characteristics of a used liquid crystal and a driving method, and is also provided a method of fabricating the same. The shape of a spacer for keeping a substrate interval constant is made such that it is a columnar shape, a radius R of curvature is 2 μm or less, a height H is 0.5 μm to 10 μm, a diameter is 20 μm or less, and an angle α is 65° to 115°. By doing so, it is possible to prevent the lowering of an opening rate and the lowering of light leakage due to orientation disturbance.
Public/Granted literature
- US20090040445A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2009-02-12
Information query
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