A method for fabricating an interconnect structure in a semiconductor device. A masking layer is formed on a dielectric layer formed on a substrate, having at least one opening. The opening is transferred into the dielectric layer. A Plasma stripping process is performed to remove the masking layer, such that a damaged sidewall portion of the dielectric layer surrounding the opening therein is formed. The opening in the dielectric layer is filled with a conductive element. The damaged sidewall portion of the dielectric layer is removed to form a gap between the dielectric layer and the conductive element, wherein substances from removal of the damaged sidewall portion of the dielectric layer are formed on the conductive element. The substances are removed using a citric acid solution.