发明授权
US07768845B2 Memory having circuitry to directly change voltages applied to bit lines and word lines in response to transitions between a read operation, first rewrite operation, and second rewrite operation
有权
存储器具有响应于读取操作，第一重写操作和第二重写操作之间的转换而直接改变施加到位线和字线的电压的电路
- 专利标题： Memory having circuitry to directly change voltages applied to bit lines and word lines in response to transitions between a read operation, first rewrite operation, and second rewrite operation
- 专利标题（中）： 存储器具有响应于读取操作，第一重写操作和第二重写操作之间的转换而直接改变施加到位线和字线的电压的电路
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申请号： US11727466申请日： 2007-03-27
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公开(公告)号： US07768845B2公开(公告)日： 2010-08-03
- 发明人: Hideaki Miyamoto
- 申请人： Hideaki Miyamoto
- 代理机构： Schwabe, Williamson & Wyatt, P.C.
- 优先权： JP2006-085628 20060327
- 主分类号： G11C7/00
- IPC分类号： G11C7/00
摘要：
A memory capable of operating at a high speed is obtained. This memory includes memory cells arranged on the intersectional positions between bit lines and word lines respectively. A read operation and a first and second rewrite operations performed when reading data of the memory cells are started by changing voltages applied to the bit lines and the word lines to applied voltages responsive to each operation, and when each operation performed when reading data of the memory cells is transferred, the voltages applied to the bit lines and the word lines are directly changed from the applied voltages responsive to the operation before transition to the applied voltages responsive to the operation after transition.
公开/授权文献
- US20070223268A1 Memory 公开/授权日：2007-09-27
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