Invention Grant
- Patent Title: Magnetoresistive element and magnetoresistive random access memory including the same
- Patent Title (中): 磁阻元件和包括其的磁阻随机存取存储器
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Application No.: US12211388Application Date: 2008-09-16
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Publication No.: US07768824B2Publication Date: 2010-08-03
- Inventor: Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Toshihiko Nagase , Tatsuya Kishi , Hiroaki Yoda
- Applicant: Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Toshihiko Nagase , Tatsuya Kishi , Hiroaki Yoda
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-248251 20070925
- Main IPC: G11C11/15
- IPC: G11C11/15 ; G11C11/14 ; G11C11/00
Abstract:
The present invention provides a low-resistance magnetoresistive element of a spin-injection write type. A crystallization promoting layer that promotes crystallization is formed in contact with an interfacial magnetic layer having an amorphous structure, so that crystallization is promoted from the side of a tunnel barrier layer, and the interface between the tunnel barrier layer and the interfacial magnetic layer is adjusted. With this arrangement, it is possible to form a magnetoresistive element that has a low resistance so as to obtain a desired current value, and has a high TMR ratio.
Public/Granted literature
- US20090080238A1 MAGNETORESISTIVE ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY INCLUDING THE SAME Public/Granted day:2009-03-26
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