发明授权
US07746146B2 Junction field effect transistor input buffer level shifting circuit
有权
结场效应晶体管输入缓冲电平移位电路
- 专利标题: Junction field effect transistor input buffer level shifting circuit
- 专利标题(中): 结场效应晶体管输入缓冲电平移位电路
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申请号: US11515252申请日: 2006-09-01
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公开(公告)号: US07746146B2公开(公告)日: 2010-06-29
- 发明人: Richard K. Chou , Damodar R. Thummalapally
- 申请人: Richard K. Chou , Damodar R. Thummalapally
- 申请人地址: US CA Los Gatos
- 专利权人: SuVolta, Inc.
- 当前专利权人: SuVolta, Inc.
- 当前专利权人地址: US CA Los Gatos
- 代理商 Darryl G. Walker
- 主分类号: H03L5/00
- IPC分类号: H03L5/00
摘要:
A level shifting circuit can include a first input junction field effect transistor (JFET) having a gate coupled to receive an input signal having a first voltage swing that provides a controllable impedance path between a first supply node and a first terminal of a first bias stack including at least one JFET. A driver circuit can be coupled to receive an output from the first bias stack that provides a level shifted output having a second voltage swing that is less than the first voltage swing.
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