发明授权
- 专利标题: Hinge memory mitigation system and method
- 专利标题(中): 铰链记忆缓解系统及方法
-
申请号: US11958110申请日: 2007-12-17
-
公开(公告)号: US07719740B2公开(公告)日: 2010-05-18
- 发明人: Patrick Ian Oden
- 申请人: Patrick Ian Oden
- 申请人地址: US TX Dallas
- 专利权人: Texas Instruments Incorporated
- 当前专利权人: Texas Instruments Incorporated
- 当前专利权人地址: US TX Dallas
- 代理商 Charles A. Brill; Wade James Brady, III; Frederick J. Telecky, Jr.
- 主分类号: G02B26/08
- IPC分类号: G02B26/08 ; G02B26/00
摘要:
Provided are a system and method for reducing failures due to hinge memory. The method, in one embodiment, includes providing a torsional element having an amount of hinge memory, wherein the hinge memory is at least partially created using an average operational temperature. The method, in this embodiment, further includes subjecting the torsional element having the hinge memory to a temperature equal to or greater than the average operational temperature while the torsional element is in a parked state for an amount of time to reduce the amount of the hinge memory.
公开/授权文献
- US20090153941A1 HINGE MEMORY MITIGATION SYSTEM AND METHOD 公开/授权日:2009-06-18
信息查询