发明授权
US07706057B2 Spectral purity filter for a multi-layer mirror, lithographic apparatus including such multi-layer mirror, method for enlarging the ratio of desired radiation and undesired radiation, and device manufacturing method
有权
用于多层反射镜的光谱纯度滤光器，包括这种多层反射镜的光刻设备，用于扩大所需辐射和不期望辐射的比率的方法，以及器件制造方法
- 专利标题： Spectral purity filter for a multi-layer mirror, lithographic apparatus including such multi-layer mirror, method for enlarging the ratio of desired radiation and undesired radiation, and device manufacturing method
- 专利标题（中）： 用于多层反射镜的光谱纯度滤光器，包括这种多层反射镜的光刻设备，用于扩大所需辐射和不期望辐射的比率的方法，以及器件制造方法
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申请号： US12230384申请日： 2008-08-28
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公开(公告)号： US07706057B2公开(公告)日： 2010-04-27
- 发明人: Maarten Marinus Johannes Wilhelmus Van Herpen , Levinus Pieter Bakker , Vadim Yevgenyevich Banine , Derk Jan Wilfred Klunder
- 申请人： Maarten Marinus Johannes Wilhelmus Van Herpen , Levinus Pieter Bakker , Vadim Yevgenyevich Banine , Derk Jan Wilfred Klunder
- 申请人地址： NL Veldhoven
- 专利权人： ASML Netherlands B.V.
- 当前专利权人： ASML Netherlands B.V.
- 当前专利权人地址： NL Veldhoven
- 代理机构： Pillsbury Winthrop Shaw Pittman, LLP
- 主分类号： F21V9/04
- IPC分类号： F21V9/04 ; F21V9/06 ; G02B5/08 ; G02B5/20
摘要：
A multi-layer mirror includes a multi-layer stack. The multi-layer stack includes a plurality of alternating layers with a multi-layer stack top layer and a spectral filter top layer arranged on the multi-layer stack. The spectral filter top layer includes a first spectral purity enhancement layer that includes a first material m1 and has a first layer thickness d1, an intermediate layer that includes a second material m2 and has a second layer thickness d2. The intermediate layer is arranged on the multi-layer stack top layer. The first material is selected from SiN, Si3N4, SiO2, ZnS, Te, diamond, CsI, Se, SiC, amorphous carbon, MgF2, CaF2, TiO2, Ge, PbF2, ZrO2, BaTiO3, LiF or NaF. The second material includes a material different from the first material, and d1+d2 has a thickness between 1.5 and 40 nm.
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