发明授权
- 专利标题: Semiconductor integrated circuit device
- 专利标题(中): 半导体集成电路器件
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申请号: US11994526申请日: 2006-06-20
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公开(公告)号: US07696707B2公开(公告)日: 2010-04-13
- 发明人: Daiki Yanagishima
- 申请人: Daiki Yanagishima
- 申请人地址: JP Kyoto
- 专利权人: Rohm Co., Ltd.
- 当前专利权人: Rohm Co., Ltd.
- 当前专利权人地址: JP Kyoto
- 代理机构: Fish & Richardson P.C.
- 优先权: JP2005-194693 20050704
- 国际申请: PCT/JP2006/312330 WO 20060620
- 国际公布: WO2007/004418 WO 20070111
- 主分类号: H02H7/09
- IPC分类号: H02H7/09
摘要:
In a semiconductor integrated circuit device of the invention, a plurality of external terminals include: a first external terminal (VCC, U, V and W terminals in the FIGURE) receiving a higher voltage than the other external terminals; and a second external terminal (FG terminal in the FIGURE) arranged adjacent to the first external terminal as one of the other external terminals, the second external terminal feeding out, from one end of a transistor Q1, a control pulse signal corresponding to the turning on and off of the transistor Q1, and the second external terminal is connected to an overvoltage protection circuit (consisting of R1, R2, Q2 and AND) that masks a control signal for turning on and off the transistor Q1 so that, when a voltage at the second external terminal reaches a predetermined threshold, the transistor Q1 is kept off all the time. In this way, it is possible to prevent, without the need for an extra external terminal, breakdown in case of a short circuit between adjacent external terminals.
公开/授权文献
- US20090079377A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 公开/授权日:2009-03-26
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