Invention Grant
- Patent Title: Measurement apparatus, exposure apparatus, and device fabrication method
- Patent Title (中): 测量装置,曝光装置和装置制造方法
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Application No.: US12020726Application Date: 2008-01-28
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Publication No.: US07692799B2Publication Date: 2010-04-06
- Inventor: Seima Kato
- Applicant: Seima Kato
- Applicant Address: JP
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP
- Agency: Rossi, Kimms & McDowell LLP
- Priority: JP2007-027372 20070206
- Main IPC: G01B9/02
- IPC: G01B9/02

Abstract:
The invention provides a measurement apparatus which measures a wavefront aberration of an optical system to be measured, the apparatus includes a measurement mask which is inserted on an object plane of the optical system to be measured, and includes a plurality of reflection units configured to generate spherical waves by reflecting light, the measurement mask including a reflection layer configured to reflect the light, a first layer which is stacked on the reflection layer, has a plurality of openings, and is made of a first substance, and a second layer which is stacked on the first layer, has a window configured to expose a region in which the plurality of openings are arrayed, and is made of a second substance different from the first substance, wherein the plurality of reflection units are formed by portions of the reflection layer, which are exposed through the plurality of openings.
Public/Granted literature
- US20080186509A1 MEASUREMENT APPARATUS, EXPOSURE APPARATUS, AND DEVICE FABRICATION METHOD Public/Granted day:2008-08-07
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