发明授权
US07692212B1 Transistor with InGaAsP collector region and integrated opto-electronic devices employing same
失效
具有InGaAsP集电极区域的晶体管和采用其的集成光电子器件
- 专利标题： Transistor with InGaAsP collector region and integrated opto-electronic devices employing same
- 专利标题（中）： 具有InGaAsP集电极区域的晶体管和采用其的集成光电子器件
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申请号： US11007697申请日： 2004-12-07
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公开(公告)号： US07692212B1公开(公告)日： 2010-04-06
- 发明人: Rajesh D. Rajavel , Stephen Thomas, III
- 申请人： Rajesh D. Rajavel , Stephen Thomas, III
- 申请人地址： US CA Malibu
- 专利权人： HRL Laboratories, LLC
- 当前专利权人： HRL Laboratories, LLC
- 当前专利权人地址： US CA Malibu
- 代理机构： Ladas & Parry
- 主分类号： H01L27/144
- IPC分类号： H01L27/144
摘要：
A double heterojunction bipolar transistor on a substrate comprises a collector formed of InGaAsP, a base in contact with the collector, an emitter in contact with the base, and electrodes forming separate electrical contacts with each of the collector, base, and emitter, respectively. A device incorporates this transistor and an opto-electronic device optically coupled with the collector of the transistor to interact with light transmitted therethrough.
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