发明授权
- 专利标题： Semiconductor light emitting device
- 专利标题（中）： 半导体发光器件
-
申请号： US11907976申请日： 2007-10-19
-
公开(公告)号： US07692203B2公开(公告)日： 2010-04-06
- 发明人: Taichiroo Konno , Kazuyuki Iizuka , Masahiro Arai
- 申请人： Taichiroo Konno , Kazuyuki Iizuka , Masahiro Arai
- 申请人地址： JP Tokyo
- 专利权人： Hitachi Cable, Ltd.
- 当前专利权人： Hitachi Cable, Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： McGinn IP Law Group, PLLC
- 优先权： JP2006-286484 20061020; JP2006-286485 20061020
- 主分类号： H01L33/00
- IPC分类号： H01L33/00
摘要：
A plurality of semiconductor layers including an active layer 6 and a light extract layer 4, and a reflective metal film 11 are formed in a semiconductor light emitting device. The light extract layer 4 is formed of a plurality of layers 23, 24 having different composition ratios. An irregularity 22 is formed on the layers 23, 24 including an outermost layer to provide a main surface S as a rough-surface.
公开/授权文献
- US20080093612A1 Semiconductor light emitting device 公开/授权日：2008-04-24
信息查询
IPC分类:
