发明授权
- 专利标题： Semiconductor device having a capacitance element and method of manufacturing the same
- 专利标题（中）： 具有电容元件的半导体器件及其制造方法
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申请号： US11923062申请日： 2007-10-24
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公开(公告)号： US07691743B2公开(公告)日： 2010-04-06
- 发明人: Naruhiko Nakanishi
- 申请人： Naruhiko Nakanishi
- 申请人地址： JP Tokyo
- 专利权人： Elpida Memory, Inc.
- 当前专利权人： Elpida Memory, Inc.
- 当前专利权人地址： JP Tokyo
- 代理机构： Sughrue Mion, PLLC
- 优先权： JP2006-290673 20061026; JP2007-263138 20071009
- 主分类号： H01L21/44
- IPC分类号： H01L21/44 ; H01L31/119
摘要：
A dielectric film is formed by depositing an amorphous strontium oxide film to a thickness of one to several atomic layers on a first electrode layer, then depositing an amorphous titanium oxide film to a thickness of one to several atomic layers on the amorphous strontium oxide film, and then heat-treating a laminated film of the amorphous strontium oxide film and the amorphous titanium oxide film at a temperature close to a crystallization start temperature, thereby converting the laminated film to a single-layer amorphous strontium titanate film containing a plurality of crystal grains therein. The laminated film may have a plurality of amorphous strontium oxide films and a plurality of amorphous titanium oxide films that are alternately laminated. A semiconductor device includes a capacitor having as its dielectric film a single-layer amorphous strontium titanate film containing a plurality of crystal grains therein.
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