发明授权
- 专利标题： Barrier metal film production method
- 专利标题（中）： 阻隔金属膜生产方法
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申请号： US11798883申请日： 2007-05-17
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公开(公告)号： US07659209B2公开(公告)日： 2010-02-09
- 发明人: Hitoshi Sakamoto , Naoki Yahata , Ryuichi Matsuda , Yoshiyuki Ooba , Toshihiko Nishimori
- 申请人： Hitoshi Sakamoto , Naoki Yahata , Ryuichi Matsuda , Yoshiyuki Ooba , Toshihiko Nishimori
- 申请人地址： JP Kawasaki-Shi
- 专利权人： Canon Anelva Corporation
- 当前专利权人： Canon Anelva Corporation
- 当前专利权人地址： JP Kawasaki-Shi
- 代理机构： Fitzpatrick, Cella, Harper & Scinto
- 优先权： JP2001-348325 20011114; JP2002-027738 20020205; JP2002-044289 20020221; JP2002-044296 20020221
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.
公开/授权文献
- US20070272655A1 Barrier metal film production method 公开/授权日：2007-11-29
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