发明授权
- 专利标题： Integrated bipolar transistor and field effect transistor
- 专利标题（中）： 集成双极晶体管和场效应晶体管
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申请号： US11947840申请日： 2007-11-30
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公开(公告)号： US07656002B1公开(公告)日： 2010-02-02
- 发明人: Curtis A. Barratt , Michael T. Fresina , Brian G. Moser , Dain C. Miller , Walter A. Wohlmuth
- 申请人： Curtis A. Barratt , Michael T. Fresina , Brian G. Moser , Dain C. Miller , Walter A. Wohlmuth
- 申请人地址： US NC Greensboro
- 专利权人： RF Micro Devices, Inc.
- 当前专利权人： RF Micro Devices, Inc.
- 当前专利权人地址： US NC Greensboro
- 代理机构： Withrow & Terranova, P.L.L.C.
- 主分类号： H01L31/058
- IPC分类号： H01L31/058 ; H01L21/8238
摘要：
The present invention relates to a microelectronic device having a bipolar epitaxial structure that provides at least one bipolar transistor element formed over at least one field effect transistor (FET) epitaxial structure that provides at least one FET element. The epitaxial structures are separated with at least one separation layer. Additional embodiments of the present invention may use different epitaxial layers, epitaxial sub-layers, metallization layers, isolation layers, layer materials, doping materials, isolation materials, implant materials, or any combination thereof.
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