发明授权
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
-
申请号： US11117726申请日： 2005-04-29
-
公开(公告)号： US07652351B2公开(公告)日： 2010-01-26
- 发明人: Kazuyuki Higashi , Noriaki Matsunaga
- 申请人： Kazuyuki Higashi , Noriaki Matsunaga
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Foley & Lardner LLP
- 优先权： JP2004-189929 20040628
- 主分类号： H01L23/58
- IPC分类号： H01L23/58
摘要：
A semiconductor device according to an embodiment of the present invention includes a plurality of chip regions and a plurality of chip rings. The plurality of chip regions include semiconductor integrated circuits each having a multilayered wiring structure using a metal wiring, and are formed into independent chips. The plurality of chip rings has the multilayered wiring structure using the metal wiring, and surround the respective chip regions. The plurality of chip rings are electrically connected to one another.
公开/授权文献
信息查询
IPC分类:
