Invention Grant
- Patent Title: Electroplating method for a semiconductor device
- Patent Title (中): 半导体器件的电镀方法
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Application No.: US12015545Application Date: 2008-01-17
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Publication No.: US07604727B2Publication Date: 2009-10-20
- Inventor: Mitsuru Kinoshita , Tsugihiko Hirano , Katsunori Takahashi
- Applicant: Mitsuru Kinoshita , Tsugihiko Hirano , Katsunori Takahashi
- Applicant Address: JP Tokyo
- Assignee: Renesas Technology Corp.
- Current Assignee: Renesas Technology Corp.
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2003-406793 20031205
- Main IPC: H01L21/288
- IPC: H01L21/288
Abstract:
An electroplating method calls for immersing a body to be plated in a plating solution containing tin and bismuth to form a tin-bismuth alloy skin layer on surfaces of the body. The plating is carried out such that a solid tin metal and a solid bismuth metal placed in the plating solution are connected to an anode and the body to be plated is connected to a cathode of a power supply.
Public/Granted literature
- US20080132005A1 ELECTROPLATING METHOD FOR A SEMICONDUCTOR DEVICE Public/Granted day:2008-06-05
Information query
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