Invention Grant
- Patent Title: Smart verify for multi-state memories
- Patent Title (中): 智能验证多状态存储器
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Application No.: US11759872Application Date: 2007-06-07
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Publication No.: US07584391B2Publication Date: 2009-09-01
- Inventor: Geoffrey S. Gongwer , Daniel C. Guterman , Yupin Kawing Fong
- Applicant: Geoffrey S. Gongwer , Daniel C. Guterman , Yupin Kawing Fong
- Applicant Address: US CA Milpitas
- Assignee: SanDisk Corporation
- Current Assignee: SanDisk Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Davis Wright Tremaine LLP
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G01R31/28

Abstract:
A “smart verify” technique, whereby multi-state memories are programmed using a verify-results-based dynamic adjustment of the multi-states verify range for sequential-state-based verify implementations, is presented. This technique can increase multi-state write speed while maintaining reliable operation within sequentially verified, multi-state memory implementations by providing “intelligent” means to minimize the number of sequential verify operations for each program/verify/lockout step of the write sequence. At the beginning of a program/verify cycle sequence only the lowest state or states are checked during the verify phase. As lower states are reached, additional higher states are added to the verify sequence and lower states can be removed.
Public/Granted literature
- US20070234144A1 Smart Verify For Multi-State Memories Public/Granted day:2007-10-04
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