发明授权
- 专利标题： Method of manufacturing a semiconductor device
- 专利标题（中）： 制造半导体器件的方法
-
申请号： US12118752申请日： 2008-05-12
-
公开(公告)号： US07579216B2公开(公告)日： 2009-08-25
- 发明人: Tadashi Munakata , Shingo Oosaka , Mitsuru Kinoshita , Yoshihiko Yamaguchi , Noriyuki Takahashi
- 申请人： Tadashi Munakata , Shingo Oosaka , Mitsuru Kinoshita , Yoshihiko Yamaguchi , Noriyuki Takahashi
- 申请人地址： JP Tokyo JP Chitose-shi, Hokkaido
- 专利权人： Renesas Technology Corp.,Renesas Northern Japan Semiconductor, Inc.
- 当前专利权人： Renesas Technology Corp.,Renesas Northern Japan Semiconductor, Inc.
- 当前专利权人地址： JP Tokyo JP Chitose-shi, Hokkaido
- 代理机构： Miles & Stockbridge P.C.
- 优先权： JP2002-211939 20020722
- 主分类号： H01L21/58
- IPC分类号： H01L21/58
摘要：
A semiconductor device manufacturing method comprising the steps of providing a matrix substrate having a main surface with plural device areas formed thereon, fixing plural semiconductor chips to the plural device areas respectively, then sealing the plural semiconductor chips all together with resin to form a block sealing member, dividing the block sealing member and the matrix substrate for each of the device areas by dicing, thereafter rubbing a surface of each of the diced sealing member portions with a brush, then storing semiconductor devices formed by the dicing once into pockets respectively of a tray, and conveying the semiconductor devices each individually from the tray. Since the substrate dividing work after block molding is performed by dicing while vacuum-chucking the surface of the block sealing member, the substrate division can be done without imposing any stress on an external terminal mounting surface of the matrix substrate.
公开/授权文献
- US20080286902A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 公开/授权日：2008-11-20
信息查询
IPC分类:
