发明授权
- 专利标题: Implementation of column redundancy for a flash memory with a high write parallelism
- 专利标题(中): 实现具有高写入并行性的闪存的列冗余
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申请号: US11611452申请日: 2006-12-15
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公开(公告)号: US07551498B2公开(公告)日: 2009-06-23
- 发明人: Simone Bartoli , Stefano Surico , Andrea Sacco , Maria Mostola
- 申请人: Simone Bartoli , Stefano Surico , Andrea Sacco , Maria Mostola
- 申请人地址: US CA San Jose
- 专利权人: Atmel Corporation
- 当前专利权人: Atmel Corporation
- 当前专利权人地址: US CA San Jose
- 代理机构: Schwegman, Lundberg & Woessner P.A.
- 主分类号: G11C7/00
- IPC分类号: G11C7/00
摘要:
A redundant memory array has r columns of redundant memory cells, r redundant senses, and a redundant column decoder. Redundant address registers store addresses of defective regular memory cells. Redundant latches are provided in n groups of r latches. Redundancy comparison logic compares addresses of defective regular memory cells with an external input address. If the comparison is true, what is provided is: a DISABLE_LOAD signal to disable the regular senses for one of the n groups of m columns, an ENABLE_LATCH signal to one of the n groups of m columns to disables corresponding regular senses, and one or r REDO signals to a respective one of the r redundant latches in one of the n groups that is disabled. The selected one of the redundant latches activates one of the r redundant senses to access a redundant column.
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