Invention Grant
US07527900B2 Reticle and optical proximity correction method 有权
光栅和光学邻近校正方法

Reticle and optical proximity correction method
Abstract:
An OPC method includes providing a primary mask having a primary pattern, forming an assist mask having a correction pattern substantially complementary to the primary pattern, and forming a reticle by overlapping the primary mask and the assist mask. The light transmittance of the correction pattern is adjustable so as to equalize the light intensity distribution of the primary mask.
Public/Granted literature
Information query
Patent Agency Ranking
0/0