Invention Grant
US07524755B2 Entire encapsulation of Cu interconnects using self-aligned CuSiN film
有权
使用自对准CuSiN膜的Cu互连的全封装
- Patent Title: Entire encapsulation of Cu interconnects using self-aligned CuSiN film
- Patent Title (中): 使用自对准CuSiN膜的Cu互连的全封装
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Application No.: US11358934Application Date: 2006-02-22
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Publication No.: US07524755B2Publication Date: 2009-04-28
- Inventor: Johnny Widodo , Bei Chao Zhang , Tong Qing Chen , Yong Kong Siew , Fan Zhang , San Leong Liew , John Sudijono , Liang Choo Hsia
- Applicant: Johnny Widodo , Bei Chao Zhang , Tong Qing Chen , Yong Kong Siew , Fan Zhang , San Leong Liew , John Sudijono , Liang Choo Hsia
- Applicant Address: SG Singapore
- Assignee: Chartered Semiconductor Manufacturing, Ltd.
- Current Assignee: Chartered Semiconductor Manufacturing, Ltd.
- Current Assignee Address: SG Singapore
- Agency: Horizon IP Pte Ltd
- Main IPC: H01L21/4763
- IPC: H01L21/4763
Abstract:
A method of forming a barrier layer and cap comprised of CuSiN for an interconnect. We provide an interconnect opening in a dielectric layer over a semiconductor structure. We form a CuSiN barrier layer over the sidewalls and bottom of the interconnect opening by reacting with the first copper layer. We then form an interconnect over the CuSiN layer filling the interconnect opening. We can form a CuSiN cap layer on the top surface of the interconnect.
Public/Granted literature
- US20070197023A1 Entire encapsulation of Cu interconnects using self-aligned CuSiN film Public/Granted day:2007-08-23
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