Invention Grant
US07524686B2 Method of making light emitting diodes (LEDs) with improved light extraction by roughening
有权
通过粗糙化制造具有改进的光提取的发光二极管（LED）的方法
- Patent Title: Method of making light emitting diodes (LEDs) with improved light extraction by roughening
- Patent Title (中): 通过粗糙化制造具有改进的光提取的发光二极管（LED）的方法
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Application No.: US11690443Application Date: 2007-03-23
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Publication No.: US07524686B2Publication Date: 2009-04-28
- Inventor: Chen-Fu Chu , Hao-Chun Cheng , Feng-Hsu Fan , Wen-Huang Liu , Chao-Chen Cheng
- Applicant: Chen-Fu Chu , Hao-Chun Cheng , Feng-Hsu Fan , Wen-Huang Liu , Chao-Chen Cheng
- Applicant Address: US ID Boise
- Assignee: Semileds Corporation
- Current Assignee: Semileds Corporation
- Current Assignee Address: US ID Boise
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L21/66
- IPC: H01L21/66
Abstract:
Methods are provided for fabricating a semiconductor light-emitting diode (LED) device by providing an LED wafer assembly having an LED stack and selectively roughening and/or texturing a light-emitting surface of the LED stack's n-doped layer. In this manner, light extraction from the LED device is improved.
Public/Granted literature
- US20070190676A1 LIGHT EMITTING DIODES (LEDS) WITH IMPROVED LIGHT EXTRACTION BY ROUGHENING Public/Granted day:2007-08-16
Information query
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