- 专利标题: Integrated thin film explosive micro-detonator
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申请号: US11981303申请日: 2007-10-31
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公开(公告)号: US07497164B1公开(公告)日: 2009-03-03
- 发明人: Gerald Laib
- 申请人: Gerald Laib
- 申请人地址: US DC Washington
- 专利权人: The United States of America as represented by the Secretary of the Navy
- 当前专利权人: The United States of America as represented by the Secretary of the Navy
- 当前专利权人地址: US DC Washington
- 代理商 Fredric J. Zimmerman
- 主分类号: F42C15/184
- IPC分类号: F42C15/184
摘要:
A method of making a thin film explosive detonator includes forming a substrate layer; depositing a metal layer in situ on the substrate layer; and reacting the metal layer to form a primary explosive layer. The method and apparatus formed thereby integrates fabrication of a micro-detonator in a monolithic MEMS structure using “in-situ” production of the explosive material within the apparatus, in sizes with linear dimensions below about 1 mm. The method is applicable to high-volume low-cost manufacturing of MEMS safety-and-arming devices. The apparatus can be initiated either electrically or mechanically at either a single point or multiple points, using energies of less than about 1 mJ.
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