Invention Grant
US07495984B2 Resistive memory devices including selected reference memory cells
有权
电阻式存储器件包括所选择的参考存储单元
- Patent Title: Resistive memory devices including selected reference memory cells
- Patent Title (中): 电阻式存储器件包括所选择的参考存储单元
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Application No.: US11527271Application Date: 2006-09-26
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Publication No.: US07495984B2Publication Date: 2009-02-24
- Inventor: Hyun-Jo Kim , Kyung-Tae Nam , In-Gyu Baek , Se-Chung Oh , Jang-Eun Lee , Jun-Ho Jeong
- Applicant: Hyun-Jo Kim , Kyung-Tae Nam , In-Gyu Baek , Se-Chung Oh , Jang-Eun Lee , Jun-Ho Jeong
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2005-0124033 20051215
- Main IPC: G11C7/02
- IPC: G11C7/02
Abstract:
A Resistance based Random Access Memory (ReRAM) can include a current reference circuit including at least three ReRAM reference cells coupled in parallel with one another and configured to provide a reference current to respective ReRAM sense amplifier circuits.
Public/Granted literature
- US20070140029A1 Resistive memory devices including selected reference memory cells Public/Granted day:2007-06-21
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