发明授权
- 专利标题: Back side wafer dicing
- 专利标题(中): 背面晶圆切片
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申请号: US11441453申请日: 2006-05-25
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公开(公告)号: US07494900B2公开(公告)日: 2009-02-24
- 发明人: Richard S. Harris , Ho W. Lo
- 申请人: Richard S. Harris , Ho W. Lo
- 申请人地址: US OR Portland
- 专利权人: Electro Scientific Industries, Inc.
- 当前专利权人: Electro Scientific Industries, Inc.
- 当前专利权人地址: US OR Portland
- 代理机构: Stoel Rives LLP
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
Systems and methods for scribing a semiconductor wafer with reduced or no damage or debris to or on individual integrated circuits caused by the scribing process. The semiconductor wafer is scribed from a back side thereof. In one embodiment, the back side of the wafer is scribed following a back side grinding process but prior to removal of back side grinding tape. Thus, debris generated from the scribing process is prevented from being deposited on a top surface of the wafer. To determine the location of dicing lanes or streets relative to the back side of the wafer, the top side of the wafer is illuminated with a light configured to pass through the grinding tape and the wafer. The light is detected from the back side of the wafer, and the streets are mapped relative to the back side. The back side of the wafer is then cut with a saw or laser.
公开/授权文献
- US20070275541A1 Back side wafer dicing 公开/授权日:2007-11-29
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