Invention Grant
- Patent Title: Deposition methods
- Patent Title (中): 沉积方法
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Application No.: US11127945Application Date: 2005-05-11
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Publication No.: US07407892B2Publication Date: 2008-08-05
- Inventor: Ronald A. Weimer
- Applicant: Ronald A. Weimer
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/31
Abstract:
The invention includes deposition methods and apparatuses which can be utilized during atomic layer deposition or chemical vapor deposition. A heated surface is provided between a stack of semiconductor substrates and a precursor inlet, and configured so that problematic side reactions occur proximate the heated surface rather than proximate the semiconductor substrates. The precursor inlet can be one of a plurality of precursor inlets, and the heated surface can be one of a plurality of heated surfaces.
Public/Granted literature
- US20060258157A1 Deposition methods, and deposition apparatuses Public/Granted day:2006-11-16
Information query
IPC分类:
