Invention Grant
- Patent Title: Method and apparatus for specimen fabrication
- Patent Title (中): 用于样品制造的方法和装置
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Application No.: US11701415Application Date: 2007-02-02
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Publication No.: US07397052B2Publication Date: 2008-07-08
- Inventor: Satoshi Tomimatsu , Kaoru Umemura , Yuichi Madokoro , Yoshimi Kawanami , Yasunori Doi
- Applicant: Satoshi Tomimatsu , Kaoru Umemura , Yuichi Madokoro , Yoshimi Kawanami , Yasunori Doi
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP9-196213 19970722; JP9-263184 19970929; JP9-263185 19970929
- Main IPC: H01J37/20
- IPC: H01J37/20

Abstract:
A system for analyzing a semiconductor device, including: a first specimen fabricating apparatus including: a vacuum chamber in which a sample substrate is placed, an ion beam irradiating optical system for forming a specimen on the sample substrate, a specimen holder to mount the specimen, and a probe for removing the specimen from the sample substrate; a second specimen fabricating apparatus, and an analyzer to analyze the specimen, wherein said first specimen fabrication apparatus has a function to separate the specimen mounted on the specimen holder and the probe in a vacuum condition.
Public/Granted literature
- US20070145302A1 Method and apparatus for specimen fabrication Public/Granted day:2007-06-28
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