Invention Grant
US07384715B2 Forming an EUV mask with a phase-shifter layer and an intensity balancer layer 有权
用移相器层和强度平衡器层形成EUV掩模

  • Patent Title: Forming an EUV mask with a phase-shifter layer and an intensity balancer layer
  • Patent Title (中): 用移相器层和强度平衡器层形成EUV掩模
  • Application No.: US11450098
    Application Date: 2006-06-09
  • Publication No.: US07384715B2
    Publication Date: 2008-06-10
  • Inventor: Sang Hun Lee
  • Applicant: Sang Hun Lee
  • Applicant Address: US CA Santa Clara
  • Assignee: Intel Corporation
  • Current Assignee: Intel Corporation
  • Current Assignee Address: US CA Santa Clara
  • Agent George Chen
  • Main IPC: G03F1/00
  • IPC: G03F1/00
Forming an EUV mask with a phase-shifter layer and an intensity balancer layer
Abstract:
The present invention describes a method including: providing a substrate, the substrate including a first region and a second region; forming a multilayer mirror over the substrate; forming a phase-shifter layer over the multilayer mirror; forming a capping layer over the phase-shifter layer; removing the capping layer and the phase-shifter layer in the second region; illuminating the first region and the second region with EUV light; and reflecting the EUV light off the first region and the second region. The present invention also describes a structure including: a substrate, the substrate including a first region and a second region; a multilayer mirror located over the first region and the second region; a phase-shifter layer located over the multilayer mirror in the region; an intensity balancer layer located over the multilayer mirror in the second region; and a capping layer located over the phase-shifter layer in the first region and over the intensity balancer layer in the second region.
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