Invention Grant
US07384715B2 Forming an EUV mask with a phase-shifter layer and an intensity balancer layer
有权
用移相器层和强度平衡器层形成EUV掩模
- Patent Title: Forming an EUV mask with a phase-shifter layer and an intensity balancer layer
- Patent Title (中): 用移相器层和强度平衡器层形成EUV掩模
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Application No.: US11450098Application Date: 2006-06-09
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Publication No.: US07384715B2Publication Date: 2008-06-10
- Inventor: Sang Hun Lee
- Applicant: Sang Hun Lee
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agent George Chen
- Main IPC: G03F1/00
- IPC: G03F1/00

Abstract:
The present invention describes a method including: providing a substrate, the substrate including a first region and a second region; forming a multilayer mirror over the substrate; forming a phase-shifter layer over the multilayer mirror; forming a capping layer over the phase-shifter layer; removing the capping layer and the phase-shifter layer in the second region; illuminating the first region and the second region with EUV light; and reflecting the EUV light off the first region and the second region. The present invention also describes a structure including: a substrate, the substrate including a first region and a second region; a multilayer mirror located over the first region and the second region; a phase-shifter layer located over the multilayer mirror in the region; an intensity balancer layer located over the multilayer mirror in the second region; and a capping layer located over the phase-shifter layer in the first region and over the intensity balancer layer in the second region.
Public/Granted literature
- US20060240339A1 Forming an EUV mask with a phase-shifter layer and an intensity balancer layer Public/Granted day:2006-10-26
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