发明授权
- 专利标题： Photo-detector and related instruments
- 专利标题（中）： 光电探测器及相关仪器
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申请号： US11009438申请日： 2004-12-09
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公开(公告)号： US07382002B2公开(公告)日： 2008-06-03
- 发明人: Henry C. Abbink
- 申请人： Henry C. Abbink
- 申请人地址： US CA Los Angeles
- 专利权人： Litton Systems, Inc.
- 当前专利权人： Litton Systems, Inc.
- 当前专利权人地址： US CA Los Angeles
- 主分类号： H01L29/768
- IPC分类号： H01L29/768 ; H01L31/08
摘要：
An apparatus comprising at least one multilayer wafer includes a device layer adjacent to a barrier layer, and the device layer includes at least two photoconductive regions separated by an etched channel extending through the device layer. In some instances the apparatus may be an accelerometer having two photodiodes formed on a silicon-on-insulator (SOI) wafer with the photodiodes defined by one or more etched channels extending through the device layer of the SOI wafer. Also disclosed are methods for forming such an apparatus.
公开/授权文献
- US20060125068A1 Photo-detector and related methods 公开/授权日：2006-06-15
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