发明授权
- 专利标题： Group III nitride semiconductor substrate
- 专利标题（中）： III族氮化物半导体衬底
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申请号： US11355985申请日： 2006-02-17
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公开(公告)号： US07374618B2公开(公告)日： 2008-05-20
- 发明人: Takehiro Yoshida
- 申请人： Takehiro Yoshida
- 申请人地址： JP Tokyo
- 专利权人： Hitachi Cable, Ltd.
- 当前专利权人： Hitachi Cable, Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Mattingly, Stanger, Malur & Brundidge, P.C.
- 优先权： JP2005-325162 20051109
- 主分类号： C30B29/38
- IPC分类号： C30B29/38 ; H01L29/06
摘要：
A GaN substrate 1, a group III nitride semiconductor substrate, is provided with an OF portion 2 for the periphery thereof. The bevel 7 on the periphery of the nitric polarity face 5 side of the GaN substrate 1 is provided throughout the entire periphery of the GaN substrate 1 including the OF portion 2, wherein the beveling angle θ2 of the bevel 7 is given a value in the range over 30° to 60° inclusive.
公开/授权文献
- US20070105258A1 Group III nitride semiconductor substrate 公开/授权日：2007-05-10
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