Invention Grant
- Patent Title: Ta based bilayer seed for IrMn CPP spin valve
- Patent Title (中): 用于IrMn CPP自旋阀的Ta基双层种子
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Application No.: US11043839Application Date: 2005-01-26
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Publication No.: US07355823B2Publication Date: 2008-04-08
- Inventor: Min Li , Kunliang Zhang , Chyu-Jiuh Torng , Yu-Hsia Chen
- Applicant: Min Li , Kunliang Zhang , Chyu-Jiuh Torng , Yu-Hsia Chen
- Applicant Address: US CA Milpitas
- Assignee: Head Way Technologies, Inc.
- Current Assignee: Head Way Technologies, Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman
- Main IPC: G11B5/33
- IPC: G11B5/33
Abstract:
The effectiveness of an IrMn pinning layer in a CPP GMR device at high switching fields has been improved by replacing the conventional single layer seed by a layer of tantalum and either ruthenium or copper. The tantalum serves to cancel out the crystallographic influence of underlying layers while the ruthenium or copper provide a suitable base on which to grow the IrMn layer.
Public/Granted literature
- US20060165881A1 Ta based bilayer seed for IrMn CPP spin valve Public/Granted day:2006-07-27
Information query
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