Invention Grant
- Patent Title: Stacked semiconductor device
- Patent Title (中): 堆叠半导体器件
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Application No.: US11166229Application Date: 2005-06-27
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Publication No.: US07352067B2Publication Date: 2008-04-01
- Inventor: Muneo Fukaishi , Hideaki Saito , Yasuhiko Hagihara , Masayuki Mizuno , Hiroaki Ikeda , Kayoko Shibata
- Applicant: Muneo Fukaishi , Hideaki Saito , Yasuhiko Hagihara , Masayuki Mizuno , Hiroaki Ikeda , Kayoko Shibata
- Applicant Address: JP JP
- Assignee: NEC Corporation,Elpida Memory, Inc.
- Current Assignee: NEC Corporation,Elpida Memory, Inc.
- Current Assignee Address: JP JP
- Agency: Dickstein, Shapiro, LLP.
- Priority: JP2004-192763 20040630
- Main IPC: H01L29/40
- IPC: H01L29/40
Abstract:
A stacked semiconductor device includes a plurality of semiconductor chips and a conductive path extending through at least one of the semiconductor chips. The semiconductor chips are stacked together. The semiconductor chips are electrically connected by the conductive path, and the conductive path has a plurality of through-connections extending through the corresponding semiconductor chip.
Public/Granted literature
- US20060001176A1 Stacked semiconductor device Public/Granted day:2006-01-05
Information query
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