Invention Grant
US07352021B2 Magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier
有权
磁性随机存取存储器件具有具有氧化物层和定向隧道势垒的富含钛的下电极
- Patent Title: Magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier
- Patent Title (中): 磁性随机存取存储器件具有具有氧化物层和定向隧道势垒的富含钛的下电极
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Application No.: US10888964Application Date: 2004-07-09
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Publication No.: US07352021B2Publication Date: 2008-04-01
- Inventor: Jun-Soo Bae , Jang-Eun Lee , Hyun-Jo Kim , In-Gyu Baek , Young-Ki Ha
- Applicant: Jun-Soo Bae , Jang-Eun Lee , Hyun-Jo Kim , In-Gyu Baek , Young-Ki Ha
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2003-0046796 20060710
- Main IPC: H01L29/76
- IPC: H01L29/76
Abstract:
Magnetic Random Access Memory (MRAM) devices include a lower electrode and a magnetic tunnel junction on the lower electrode. The magnetic tunnel junction includes a seed layer and a tunneling barrier that is oriented in a same direction as the most closely packed plane direction of the seed layer. An oxide layer may be provided between the lower electrode and the magnetic tunnel junction. The lower electrode may be a titanium-rich TiN layer having more than 50 atomic percent titanium content. Analogous fabrication methods are also described.
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