Invention Grant
- Patent Title: Patterned exchange bias GMR using metallic buffer layer
- Patent Title (中): 图案交换偏置GMR使用金属缓冲层
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Application No.: US11036957Application Date: 2005-01-14
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Publication No.: US07336452B2Publication Date: 2008-02-26
- Inventor: Moris Dovek , Po-Kang Wang , Chen-Jung Chien , Chyu-Jiuh Torng , Yun-Fei Li
- Applicant: Moris Dovek , Po-Kang Wang , Chen-Jung Chien , Chyu-Jiuh Torng , Yun-Fei Li
- Applicant Address: US CA Milpitas
- Assignee: Headway Technologies, Inc.
- Current Assignee: Headway Technologies, Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman
- Main IPC: G11B5/33
- IPC: G11B5/33

Abstract:
In magnetic read heads based on bottom spin valves the preferred structure is for the longitudinal bias layer to be in direct contact with the free layer. Such a structure is very difficult to manufacture. The present invention overcomes this problem by introducing an extra layer between the bias electrodes and the free layer. This layer protects the free layer during processing but is thin enough to not interrupt exchange between the bias electrodes and the free layer. In one embodiment this is a layer of copper about 5 Å thick and parallel exchange is operative. In other embodiments ruthenium is used to provide antiparallel exchange between the bias electrode and the free layer. A process for manufacturing the structure is also described.
Public/Granted literature
- US20050128649A1 Patterned exchange bias GMR using metallic buffer layer Public/Granted day:2005-06-16
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