发明授权
US07256740B2 Antenna system using complementary metal oxide semiconductor techniques
有权
天线系统采用互补金属氧化物半导体技术
- 专利标题： Antenna system using complementary metal oxide semiconductor techniques
- 专利标题（中）： 天线系统采用互补金属氧化物半导体技术
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申请号： US11095326申请日： 2005-03-30
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公开(公告)号： US07256740B2公开(公告)日： 2007-08-14
- 发明人: Keith R. Tinsley , Seong-Youp Suh
- 申请人： Keith R. Tinsley , Seong-Youp Suh
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Kacvinsky LLC
- 主分类号： H01Q1/38
- IPC分类号： H01Q1/38
摘要：
Apparatus, system, and method are described for a complementary metal oxide semiconductor (CMOS) integrated circuit device having a first metal layer that includes a radiating element and a second metal layer that includes a first conductor coupled to the radiating element. The first conductor and the radiating element are mutually coupled to form an antenna to wirelessly communicate a signal.
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