Invention Grant
US07190019B2 Integrated circuits with openings that allow electrical contact to conductive features having self-aligned edges
有权
具有开口的集成电路，其允许电接触具有自对准边缘的导电特征
- Patent Title: Integrated circuits with openings that allow electrical contact to conductive features having self-aligned edges
- Patent Title (中): 具有开口的集成电路，其允许电接触具有自对准边缘的导电特征
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Application No.: US11013593Application Date: 2004-12-14
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Publication No.: US07190019B2Publication Date: 2007-03-13
- Inventor: Yi Ding
- Applicant: Yi Ding
- Applicant Address: TW Hsin-Chu
- Assignee: ProMOS Technologies Inc.
- Current Assignee: ProMOS Technologies Inc.
- Current Assignee Address: TW Hsin-Chu
- Agency: MacPherson Kwok Chen & Heid LLP
- Agent Michael Shenker
- Main IPC: H01L29/787
- IPC: H01L29/787 ; H01L29/788 ; H01L29/336
Abstract:
A widened contact area (170X) of a conductive feature (170) is formed by means of self-alignment between an edge (170E2) of the conductive feature and an edge (140E) of another feature (140). The other feature (“first feature”) is formed from a first layer, and the conductive feature is formed from a second layer overlying the first layer. The edge (170E2) of the conductive feature is shaped to provide a widened contact area. This shaping is achieved in a self-aligned manner by shaping the corresponding edge (140E) of the first feature.
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