An ion implanter having a source, a workpiece support and a transport system for delivering ions from the source to an ion implantation chamber that contains the workpiece support. The implanter includes one or more removable inserts mounted to an interior of either the transport system or the ion implantation chamber for collecting material entering either the transport system or the ion implantation chamber due to collisions between ions and the workpiece within the ion implantation chamber during ion processing of the workpiece. A temperature control coupled to the one or more removable inserts for maintaining the temperature of the insert at a controlled temperature to promote formation of a film on said insert during ion treatment due to collisions between ions and said workpiece.