发明授权
- 专利标题: Semiconductor memory device and method of reading data
- 专利标题(中): 半导体存储器件及数据读取方法
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申请号: US10738999申请日: 2003-12-19
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公开(公告)号: US07161202B2公开(公告)日: 2007-01-09
- 发明人: Katsuhiko Hoya , Daisaburo Takashima
- 申请人: Katsuhiko Hoya , Daisaburo Takashima
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权: JP2003-338159 20030929
- 主分类号: H01L29/76
- IPC分类号: H01L29/76 ; H01L29/94 ; H01L31/119
摘要:
First and second ferroelectric capacitors are selectively connected with a first bit line. Data is read to the first bit line from a first ferroelectric capacitor by applying a first voltage in a coordinate increasing direction of an axis or from the second ferroelectric capacitor by applying a second voltage having a sign opposite to the first voltage in the coordinate increasing direction. Third and fourth ferroelectric capacitors are selectively connected with a second bit line. Data is read to the second bit line from the third ferroelectric capacitor by applying a third voltage having the same sign as the first voltage in the coordinate increasing direction or from the fourth ferroelectric capacitor by applying a fourth voltage having the same sign as the second voltage in the coordinate increasing direction. A sense amplifier amplifies the potential difference between the first and second bit lines.
公开/授权文献
- US20050067645A1 Semiconductor memory device and method of reading data 公开/授权日:2005-03-31
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