发明授权
US07157384B2 Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD)
有权
通过等离子体增强化学气相沉积(PECVD)的氧掺杂的低介电(低k)阻挡膜
- 专利标题: Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD)
- 专利标题(中): 通过等离子体增强化学气相沉积(PECVD)的氧掺杂的低介电(低k)阻挡膜
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申请号: US11021319申请日: 2004-12-22
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公开(公告)号: US07157384B2公开(公告)日: 2007-01-02
- 发明人: Kang Sub Yim , Melissa M. Tam , Dian Sugiarto , Chi-I Lang , Peter Wai-Man Lee , Li-Qun Xia
- 申请人: Kang Sub Yim , Melissa M. Tam , Dian Sugiarto , Chi-I Lang , Peter Wai-Man Lee , Li-Qun Xia
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Patterson and Sheridan
- 主分类号: H01L21/31
- IPC分类号: H01L21/31 ; H01L21/469
摘要:
Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also includes a barrier layer. Methods for depositing oxygen-doped silicon carbide barrier layers are also provided. The silicon carbide layer may be deposited by reacting a gas mixture comprising an organosilicon compound, an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, and optionally, helium in a plasma. Alternatively, the silicon carbide layer may be deposited by reacting a gas mixture comprising hydrogen or argon and an organosilicon compound in a plasma.
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