发明授权
- 专利标题: Stacked semiconductor device assembly and method for forming
- 专利标题(中): 叠层半导体器件组装及其成型方法
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申请号: US10739605申请日: 2003-12-18
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公开(公告)号: US07132303B2公开(公告)日: 2006-11-07
- 发明人: James J. Wang , Alan J. Magnus , Justin E. Poarch
- 申请人: James J. Wang , Alan J. Magnus , Justin E. Poarch
- 申请人地址: US TX Austin
- 专利权人: Freescale Semiconductor, Inc.
- 当前专利权人: Freescale Semiconductor, Inc.
- 当前专利权人地址: US TX Austin
- 代理商 Joanna G. Chiu; Michael P. Noonan
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
One embodiment relates to using a robust metal layer of a semiconductor device to form landing pads. In one embodiment, a sputterable, nonwettable refractory metal is used as a solder mask for the landing pads. A second device may then be coupled to the robust metal layer landing pads of the semiconductor device. In one embodiment, the landing pads are formed while the semiconductor device is in wafer form, and a second device is then coupled to the landing pads of each of the plurality of semiconductor devices within the wafer, such that each semiconductor device within the wafer is electrically coupled to a second device. In this manner, each semiconductor device within the wafer and its corresponding second device may be probed and tested as a system. After probing and testing, the wafer may be singulated into a plurality of individual device assemblies which may then be packaged.
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