发明授权
- 专利标题： Method to control artifacts of microstructural fabrication
- 专利标题（中）： 控制微结构制作工艺的方法
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申请号： US10165356申请日： 2002-06-06
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公开(公告)号： US07105098B1公开(公告)日： 2006-09-12
- 发明人: Randy J. Shul , Christi G. Willison , W. Kent Schubert , Ronald P. Manginell , Mary-Anne Mitchell , Paul C. Galambos
- 申请人： Randy J. Shul , Christi G. Willison , W. Kent Schubert , Ronald P. Manginell , Mary-Anne Mitchell , Paul C. Galambos
- 申请人地址： US NM Albuquerque
- 专利权人： Sandia Corporation
- 当前专利权人： Sandia Corporation
- 当前专利权人地址： US NM Albuquerque
- 代理商 Kevin W. Bieg
- 主分类号： B44C1/22
- IPC分类号： B44C1/22
摘要：
New methods for fabrication of silicon microstructures have been developed. In these methods, an etching delay layer is deposited and patterned so as to provide differential control on the depth of features being etched into a substrate material. Compensation for etching-related structural artifacts can be accomplished by proper use of such an etching delay layer.
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