发明授权
US07084672B1 Sense amplifier circuit for content addressable memory device 有权
用于内容可寻址存储器件的感应放大器电路

  • 专利标题: Sense amplifier circuit for content addressable memory device
  • 专利标题(中): 用于内容可寻址存储器件的感应放大器电路
  • 申请号: US10873608
    申请日: 2004-06-22
  • 公开(公告)号: US07084672B1
    公开(公告)日: 2006-08-01
  • 发明人: Anita X. MengEric H. Voelkel
  • 申请人: Anita X. MengEric H. Voelkel
  • 代理商 Bradley T. Sako
  • 主分类号: G11C7/00
  • IPC分类号: G11C7/00
Sense amplifier circuit for content addressable memory device
摘要:
A sense amplifier for a content addressable memory (CAM) device can utilize charge sharing between a match line and a pseudo-supply line to indicate a mis-match indication. A sense amplifier (200) can include match line (202) that can be precharged to a high supply potential (VCC), a sense node (206), and a pseudo-VSS (PVSS) line (204) that can be precharged to a low supply potential (VSS). In a match result, match line (202) can remain precharged, keeping sense device (P2) turned off, and sense node (206) remains low, generating a low output signal (SAOUT). In a mis-match result, match line (202) and sense node (206) can be equalized. A resulting drop in match line (202) potential can turn on sense device (P2), and sense node (206) can be pulled high. As a result, output signal (SAOUT) can be driven high.
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