- 专利标题： High frequency semiconductor module, high frequency semiconductor device and manufacturing method for the same
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申请号： US10902780申请日： 2004-08-02
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公开(公告)号： US06940157B2公开(公告)日： 2005-09-06
- 发明人: Toru Sugiyama , Kouhei Morizuka , Masayuki Sugiura , Yasuhiko Kuriyama , Yoshikazu Tanabe
- 申请人： Toru Sugiyama , Kouhei Morizuka , Masayuki Sugiura , Yasuhiko Kuriyama , Yoshikazu Tanabe
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JPP2002-240529 20020821
- 主分类号： H01L23/12
- IPC分类号： H01L23/12 ; H01L23/00 ; H01L23/485 ; H01L23/488 ; H01L29/72
摘要：
A high frequency semiconductor module, includes: a semiconductor chip having top and bottom surfaces; a semiconductor element merged in the semiconductor chip; a ground pad of the semiconductor element disposed on the top surface; a metal layer configured to connect to the ground pad and extend to sidewalls of the semiconductor chip; a ground metal arranged on a surface of a mounting substrate; and a conductive material formed on the ground, configured to connect the metal layer and the ground metal.
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