发明授权
US06933809B2 Film bulk acoustic resonator (FBAR) device and method for producing the same
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薄膜体声共振器(FBAR)装置及其制造方法
- 专利标题: Film bulk acoustic resonator (FBAR) device and method for producing the same
- 专利标题(中): 薄膜体声共振器(FBAR)装置及其制造方法
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申请号: US10601658申请日: 2003-06-24
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公开(公告)号: US06933809B2公开(公告)日: 2005-08-23
- 发明人: Je Hong Kyoung , Kook Hyun Sunwoo
- 申请人: Je Hong Kyoung , Kook Hyun Sunwoo
- 申请人地址: KR Kyungki-Do
- 专利权人: Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人: Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人地址: KR Kyungki-Do
- 代理机构: Lowe Hauptman & Berner, LLP
- 优先权: KR10-2003-0021705 20030407
- 主分类号: H01L41/09
- IPC分类号: H01L41/09 ; H01L41/08 ; H01L41/18 ; H01L41/22 ; H01L41/29 ; H01L41/319 ; H03H3/02 ; H03H9/17 ; H03H9/56 ; H03H9/00
摘要:
An FBAR device includes a substrate structure provided with an upper surface, a seed layer formed on the upper surface of the substrate structure and made of one selected from gold (Au) and titanium (Ti), and one or more acoustic resonant portions. Each of the acoustic resonant portions includes a lower electrode film formed on the seed layer and made of molybdenum (Mo), a piezoelectric layer formed on the lower electrode film and made of aluminum nitride (AlN), and an upper electrode film formed on the piezoelectric layer.
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